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| RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features * 25A, 60V * rDS(ON) = 0.047 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP25N06 RF1S25N06SM PACKAGE TO-220AB TO-263AB BRAND RFP25N06 F1S25N06 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. G S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) DRAIN (FLANGE) 4-511 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP25N06, RF1S25N06SMS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP25N06, RF1S25N06SM 60 60 20 25 (Figure 5) (Figure 6) 72 0.48 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 11) VGS = VDS, ID = 250A (Figure 10) VDS = 60V VGS = 0V TC = 25oC TC = 150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 25A, RL = 1.92 Ig(REF) = 0.75mA (Figure 13) (Figure 3) TYP 14 30 45 22 975 330 95 MAX 4 1 50 100 0.047 60 100 80 45 3 2.083 62 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA VGS = 20V ID = 25A, VGS = 10V (Figure 9) VDD = 30V, ID = 12.5A RL = 2.4, VGS = 10V RGS = 10 (Figure 13) VDS = 25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr ISD = 25A ISD = 25A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns 4-512 RFP25N06, RF1S25N06SM Typical Performance Curves 1.2 Unless Otherwise Specified 30 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PDM ZJC, NORMALIZED 10-4 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 ID, DRAIN CURRENT (A) TC = 25oC TJ = MAX RATED SINGLE PULSE IDM, PEAK CURRENT (A) VGS = 20V 200 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 ----------------------- 150 VGS = 10V 100 100s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 -5 10 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) TC = 25oC 100 101 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 4-513 RFP25N06, RF1S25N06SM Typical Performance Curves 100 IAS, AVALANCHE CURRENT (A) Unless Otherwise Specified (Continued) 70 60 ID, DRAIN CURRENT (A) VGS = 20V VGS = 10V VGS = 8V STARTING TJ = 25oC 50 40 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 7V VGS = 6V 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.01 1 0.1 tAV, TIME IN AVALANCHE (s) 10 20 10 0 VGS = 4.5V 0 VGS = 5V 8 2 4 6 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS 70 60 ID, DRAIN CURRENT (A) 50 175oC 40 30 20 10 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON RESISTANCE 10 VDD = 15V -55oC 25oC 2.5 2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 25A 1.5 1.0 0.5 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE VGS = VDS ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 ID = 250A BREAKDOWN VOLTAGE 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-514 RFP25N06, RF1S25N06SM Typical Performance Curves 1600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD Unless Otherwise Specified (Continued) VDS , DRAIN TO SOURCE VOLTAGE (V) 60 VDD = BVDSS 45 VDD = BVDSS 7.5 10 VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1200 CISS 30 0.75 BVDSS 15 0.50 BVDSS 0.25 BVDSS RL = 2.4 Ig(REF) = 0.75mA VGS = 10V 0 20 -------------------I g ( ACT ) I g ( REF ) t, TIME (s) 80 -------------------I g ( ACT ) I g ( REF ) 5.0 800 COSS 2.5 400 CRSS 0 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDS VDS VGS RL + tOFF td(OFF) tr tf 90% td(ON) 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-515 RFP25N06, RF1S25N06SM Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 20V VGS + Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM 4-516 RFP25N06, RF1S25N06SM PSPICE Electrical Model .SUBCKT RFP25N06 2 1 3 ; rev 8/19/94 CA 12 8 1.83e-9 CB 15 14 1.98e-9 CIN 6 8 9.7e-10 DPLCAP 5 LDRAIN RSCL1 RSCL2 + 51 5 ESCL 51 50 RDRAIN 16 VTO 6 + 21 MOS1 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE DBREAK DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.9 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 GATE 10 DRAIN 2 ESG + EVTO + 18 8 6 8 11 17 EBREAK 18 MOS2 + DBODY - LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.5e-9 1 LGATE 9 20 RGATE - MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.1e-3 RGATE 9 20 2.88 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 20.3e-3 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD S1A 12 13 8 S1B CA + EGS 6 8 S2A 14 13 S2B 13 CB + EDS 5 8 14 15 RBREAK 17 18 RVTO IT 19 VBAT + - - VBAT 8 19 DC 1 VTO 21 6 0.764 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/108,6))} .MODEL DBDMOD D (IS = 2.32e-13 RS = 5.72e-3 TRS1 = 2.56e-3 TRS2 = -5.13e-6 CJO = 1.18e-9 TT = 5.62e-8) .MODEL DBKMOD D (RS = 2.00e-1 TRS1 = 3.33e-4 TRS2 = 2.68e-6) .MODEL DPLCAPMOD D (CJO = 6.55e-10 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.89 KP = 15.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.04e-3 TC2 = -1.04e-6) .MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 1.77e-5) .MODEL RSCLMOD RES (TC1 = 2.0e-3 TC2 = 1.5e-6) .MODEL RVTOMOD RES (TC1 = -5.35e-3 TC2 = -3.77e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.98 VOFF= -3.02) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 4-517 RFP25N06, RF1S25N06SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-518 |
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